Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture

V. Yu. Lisenkov,M. M. Kharkov,D. V. Kolodko,A. V. Tumarkin,A. V. Kaziev
DOI: https://doi.org/10.1134/s1064226923070070
2024-01-02
Journal of Communications Technology and Electronics
Abstract:The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O 2 ) have been studied. The range of the average power density at the target was 60–120 W/cm 2 at a pulse duration of 100–300 μs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. Si x O y coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.
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