Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Oxygen tracer diffusion in amorphous hafnia films for resistive memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Improving the High Resistance State Retention Degradation of Al-Doped HfOx Based on Ab Initio Simulations

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films

Defect States And Charge Trapping Characteristics Of Hfo2 Films For High Performance Nonvolatile Memory Applications

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM

Thermodynamic origin of nonvolatility in resistive memory

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Improved Uniformity Of Resistive Switching Behaviors In Hfo2 Thin Films With Embedded Al Layers

Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

Thickness dependent phase transformation and resistive switching performance of HfO 2 thin films

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments