Abstract:Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1-5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14-17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era.

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits

Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET

Organic Ternary Logic Inverter using Negative Transconductance Pull-Down Switching Transistor

Negative Transconductance in Multi-Layer Organic Thin-Film Transistors

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction

A hot-emitter transistor based on stimulated emission of heated carriers

Negative differential resistance and characteristic nonlinear electromagnetic response of a Topological Insulator

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

A Transverse Tunnelling Field-Effect Transistor Made from a Van Der Waals Heterostructure

Reconfigurable MoTe2 Field-Effect Transistors and Its Application in Compact CMOS Circuits

Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Simulation-Based Study of Negative Capacitance Double-Gate Junctionless Transistors with Ferroelectric Gate Dielectric

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Topological phase change transistors based on tellurium Weyl semiconductor

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering