Laser lift-off technique for applications in III-N microelectronics: A review

Sabuj Chowdhury,Sabrina Alam,Md Didarul Alam,Fahmida Sharmin Jui
DOI: https://doi.org/10.1016/j.mee.2024.112198
IF: 2.3
2024-04-30
Microelectronic Engineering
Abstract:The development of flexible electronics, better heat dissipation capabilities, increased LED light extraction efficiency, and the implementation of inverted barrier N-polar high electron mobility transistor (HEMT) for power electronics are all made possible by adopting laser lift-off (LLO), a technology that enables the movement of discrete III-N elements onto any substrates which are otherwise not attainable. In this paper, we focus on evaluating the LLO mechanism, its application for III-N epilayers and devices, and assessing their structural and electronic characteristics to give an overview of the advancement in LLO technology for III-N microelectronics.
nanoscience & nanotechnology,engineering, electrical & electronic,optics,physics, applied
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