Abstract:Micro light-emitting diodes (micro-LEDs) are pivotal in next-generation display technologies, driven by the need for high pixel density. This study introduces a novel methodology utilizing wide sapphire nanomembranes (W-SNM) as a dual-purpose template for high-quality epitaxial growth and the mechanical lift-off of individual micro-LEDs. Micro-LEDs grow individually on W-SNM, obviating the chip singulation process. By employing mechanical fracturing of the thin W-SNM, our method facilitates the transfer of micro-LEDs without the conventional laser lift-off (LLO) process. Previously introduced sapphire nanomembranes (SNM) have shown promise in enhancing epitaxial layer quality; however, they encountered challenges in managing micro-LED size variation and achieving efficient mechanical transfer. Here, we apply simple yet effective adjustments to the SNM structure, specifically, its elevation and widening. This strategic modification allows micro-LEDs to endure applied forces without incurring cracks or defects, ensuring that only the targeted W-SNM are selectively fractured. The mechanically transferred vertical 15 × 15 μm2 micro-LED device operates at an optimal turn-on voltage of 3.3 V. Finite element simulations validate the mechanical strain distribution between the W-SNM and GaN when pressure is applied, confirming the efficacy of our design approach. This pioneering methodology offers a streamlined, efficient pathway for the production and mechanical transfer of micro-LEDs, presenting new avenues for their integration into next-generation, high-performance displays.

P‐85: Development of High‐yield Laser Lift‐off Process for Micro LED Display

High-yield Micro-LED laser transfer accomplished using an ablation-type release material

Mass transfer for Micro-LED display: Transfer printing techniques

Efficient Mini/Micro-Perovskite Light-Emitting Diodes

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P‐10.1: Transfer Process of Micro‐LED Using Laser

23‐3: Application of Laser‐Assisted Bonding in Micro‐LED display technology

P‐6.2: A Study on Micro‐LED Selective Repair Technology for Mass Production Purpose

Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays

P‐161: Full‐in‐situ Imaging and Laser Processing System Supporting Detection and Removal of Defective Micro‐LED Dies During Mass Transfer

Mass transfer, detection and repair technologies in micro-LED displays

84‐4: Transfer of Flip‐Chip Structure micro‐LED from Sapphire to Thin Film

Influences of Laser Lift-off Process on the Performances of Large-Area Light-Emitting Diodes

P‐6.8: Study of Mass Transfer for Micro‐LED Manufacturing

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Bonding Process for Micro-LEDs on Polyimide Sacrificial Layer Supporting Laser-Induced Mass Transfer

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