Bonding Process for Micro-LEDs on Polyimide Sacrificial Layer Supporting Laser-Induced Mass Transfer

Zhenghua Ma,Yuxuan Cao,Zhen Zhang
DOI: https://doi.org/10.1109/3m-nano61605.2024.10769730
2024-01-01
Abstract:This study introduces a novel bonding technique utilizing a polyimide (PI) sacrificial layer for the laser-induced mass transfer of micro-light-emitting diodes (Micro-LEDs). We propose a set of bonding process parameters and investigate the impact of applying pressure during the bonding procedure. The efficiency of the bonding process is quantitatively assessed by defining the bonding success ratio and the embedding depth ratio. To investigate the removal of excess sacrificial layers and sidewall residues, oxygen reactive ion etching (RIE) is employed on the bonded Micro-LEDs. The effectiveness of RIE is demonstrated by measuring the embedding depth ratio with a white light interferometer and conducting morphological analysis of the Micro-LEDs using a scanning electron microscope. Furthermore, to verify the complete removal of almost all excess PI sacrificial layers, energy dispersive X-ray spectroscopy is employed on the sacrificial layer before and after RIE treatment.
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