Thermoelectric Properties of Strained β-Cu 2 Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong
DOI: https://doi.org/10.1021/acsami.1c08686
2021-07-20
Abstract:In recent years, the high-temperature phase of Cu<sub>2</sub>Se, namely, β-Cu<sub>2</sub>Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in β-Cu<sub>2</sub>Se show a distinct ion–liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized β-Cu<sub>2</sub>Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type β-Cu<sub>2</sub>Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained β-Cu<sub>2</sub>Se. The results show that the n-type β-Cu<sub>2</sub>Se can exhibit superior <i>zT</i> values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type <i>zT</i> values. The predicted maximum <i>zT</i> values for n-type and p-type β-Cu<sub>2</sub>Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu<sub>2</sub>Se-based thermoelectric devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08686?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08686</a>.The method for electrical transport properties, structural stability analysis, the method for lattice thermal conductivity, electronic thermal conductivity, and <i>zT</i> values calculated by the lattice thermal conductivity from molecular dynamics simulations, formation energy of β-Cu<sub>2</sub>Se, and formation energy of doped β-Cu<sub>2</sub>Se (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08686/suppl_file/am1c08686_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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