Abstract:In recent years, the high-temperature phase of Cu2Se, namely, β-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in β-Cu2Se show a distinct ion–liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized β-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type β-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained β-Cu2Se. The results show that the n-type β-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type β-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08686?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08686</a>.The method for electrical transport properties, structural stability analysis, the method for lattice thermal conductivity, electronic thermal conductivity, and zT values calculated by the lattice thermal conductivity from molecular dynamics simulations, formation energy of β-Cu2Se, and formation energy of doped β-Cu2Se (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08686/suppl_file/am1c08686_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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