Boosting Thermoelectric Performance of Cu 2 SnSe 3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects
Hongwei Ming,Gaofan Zhu,Chen Zhu,Xiaoying Qin,Tao Chen,Jian Zhang,Di Li,Hongxing Xin,Bushra Jabar
DOI: https://doi.org/10.1021/acsnano.1c03120
IF: 17.1
2021-06-02
ACS Nano
Abstract:As an eco-friendly thermoelectric material, Cu<sub>2</sub>SnSe<sub>3</sub> has recently drawn much attention. However, its high electrical resistivity ρ and low thermopower <i>S</i> prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved <i>via</i> S alloying, resulting in 1.6 times enhancement of <i>S</i> (from 170 to 277 μV/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of ρ and a 2.2 times enhancement of <i>S</i> (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 μW cm<sup>–1</sup> K<sup>–2</sup> was achieved at ∼800 K for the Cu<sub>2</sub>Sn<sub>0.82</sub>In<sub>0.18</sub>Se<sub>2.7</sub>S<sub>0.3</sub> sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained <i>via</i> intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe<sub>2</sub> nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu<sub>2</sub>Sn<sub>0.82</sub>In<sub>0.18</sub>Se<sub>2.7</sub>S<sub>0.3</sub>, which is 4.7-fold larger than that of pristine Cu<sub>2</sub>SnSe<sub>3</sub>.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03120?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03120</a>.Temperature dependence of <i>C</i><sub><i>p</i></sub> for Cu<sub>2</sub>SnSe<sub>3</sub>, Cu<sub>2</sub>SnSe<sub>2.7</sub>S<sub>0.3</sub>, and Cu<sub>2</sub>Sn<sub>0.82</sub>In<sub>0.18</sub>Se<sub>2.7</sub>S<sub>0.3</sub>; phase characterization for all investigated samples; temperature dependence of the ZT value for Cu<sub>2</sub>SnSe<sub>3–<i>x</i></sub>S<sub><i>x</i></sub> and the repeatability of thermoelectric performance for Cu<sub>2</sub>Sn<sub>0.82</sub>In<sub>0.18</sub>Se<sub>2.7</sub>S<sub>0.3</sub>; calculation details of <i>m</i><sub>d</sub>*; optical band gaps for S-alloyed Cu<sub>2</sub>SnSe<sub>3</sub>; unfolded effective band structure of Cu<sub>2</sub>SnSe<sub>3</sub>; calculation of lattice thermal conductivity <i>via</i> the Debye–Callaway model; and the calculation details of thermopower-dependent thermoelectric properties (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03120/suppl_file/nn1c03120_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology