Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies

Zhixiong Yin,Ruiming Lu,Trevor P. Bailey,Tao Ma,Ctirad Uher,Pierre F.P. Poudeu

DOI: https://doi.org/10.1016/j.cej.2024.157558

IF: 15.1

2024-11-11

Chemical Engineering Journal

Abstract:Modulating Cu + ion disorder in Cu 2 Se can enable control over the polymorphism and the carrier density leading to enhanced thermoelectric properties for both α- and β-Cu 2 Se. Here we report that the incorporation of Cr 3+ into the Cu 2 Se crystal lattice facilitates the stabilization of α-Cu 2 Se at 300 K leading to a large (∼140%) reduction in the carrier density both below and above the phase transition. This is attributed to the reduction in the density of intrinsic copper interstitials ( Cui∙ ) within the Cu (2-δ-λ) ( CrCu.. ) λ ( VCu′ ) δ ( Cuix ) δ -2λ ( h∙ ) δ-2λ Se crystal lattice. Such optimization of the carrier density led to a large (63%) increase in the thermopower and a drastic (46%) reduction in the total thermal conductivity for both α- and β-Cu 2 Se matrices. Consequently, a significant enhancement of the thermoelectric performance is observed in the entire temperature range from 300 K to 773 K. This results in high average ZT values for both α-Cu 2 Se ( ZT ave = 0.60) and β-Cu 2 Se ( ZT ave = 0.97), which paves the way for both near room temperature and high temperatures applications. This work provides a new approach to optimize the thermoelectric performance of Cu 2 Se-based materials by leveraging the interaction between mobile intrinsic Cui. and extrinsic VCu′ to suppress the hole density.

engineering, chemical, environmental