Abstract:A facile interface engineering strategy is proposed to boost the thermoelectric figure of merit (ZT) of copper selenide by incorporation of B4C nanoparticles. The presence of B4C nanoparticles and complex interfaces gives rise to pronounced interfacial trapping effects and nano‐dispersion effects, leading to synergistical enhancement in both the high‐temperature thermoelectric performance and mechanical properties. Degenerate semiconductors usually demonstrate a metallic‐like conduction behavior, showing limited carrier mobility at high temperatures. Herein, by incorporating B4C nanoparticles into the Cu1.99Se system, an unusual switch from the "degenerate" to "non‐degenerate" semiconducting behavior is revealed as a result of the engineered interfaces. Heterogeneous interfaces and disordered Cu2Se amorphous phases are introduced in the Cu1.99Se/B4C composites, which generate a trapping effect against the mobile Cu ions, leading to a distinctive "hump" signature for electrical conductivity. Benefiting from this rare high‐temperature thermoelectric response, a high power factor is obtained due to reduced carrier concentration and enhanced mobility, and low lattice thermal conductivity is retained because of relatively stronger anharmonic lattice vibrations. Consequently, the Cu1.99Se + 0.9 vol.% B4C sample at least achieves a maximum thermoelectric figure of merit (ZT) of 2.6 at 1025 K with synergistically enhanced mechanical robustness. The present interface engineering strategy may be applicable to other thermoelectric materials with ionic migration characteristics.

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