Abstract:Known as a weak topological insulator (TI), BiSe structurally exhibits alternating stacks of quantum spin Hall bilayer ("Bi2") and three-dimensional TI layer ("Bi2Se3"). The low lattice thermal conductivity of BiSe due to the presence of Bi2 bilayers promises potentially good thermoelectric performance. Herein, the thermoelectric properties of nominal Bi1−xCuxSe samples were studied as the functions of the content of Cu additive and temperature. It is found that Cu additives in BiSe (1) profoundly affect the texture of densified polycrystalline samples by inclining the crystallographic c-axis parallel toward the pressure direction in the densification process, (2) increase considerably the effective mass and thus the Seebeck coefficient, and (3) yield point defects and Cu–Se secondary phases that effectively scatter heat-carrying phonons. As a result, the optimized electrical and thermal properties yield a thermoelectric figure of merit of zT ~ 0.29 in Bi1−xCuxSe (x = 0.03) sample at 467 K in parallel to the pressure direction and a zT ~ 0.20 at 468 K in the perpendicular direction.<h3 class="a-plus-plus">Graphic abstract</h3>

Enhanced Thermoelectric Performance of a BiCuSeO System Via Band Gap Tuning.

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Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

Band Structure Manipulated by High Pressure-Assisted Te Doping Realizing Improvement in Thermoelectric Performance of BiCuSeO System

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu 1.8 S via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

Synergistically optimized electron and phonon transport of p-type BiCuSeO oxyselenides via Pb dopant and Te composite

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

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Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Rational triple optimizations boost near-room-temperature thermoelectric performance of BiSe

Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics