Abstract:To establish a description of realistic structural evolution of a growth film, we propose a local definite continuous-random-network (CRN) structure combined with a kinetic Monte Carlo (KMC) method based on an atomic-scale mechanism from first-principles density-functional-theory computations and molecular-dynamics computations. The proposed CRN-KMC method elucidates the evolution of elaborate topological structure and the transformation from amorphous phase to nanocrystalline phase of Si films, which is essentially attributed to the atomic interactive behavior of film growth. The method further predicts the realistic structural networks of a growing film at various temperatures based on various atomic-scale mechanisms competing with each other, mechanisms that not only essentially drive the radical from physisorption to chemisorption with the film surface, but also decidedly influence the film-surface chemical composition. In particular, we find the evolution of topological structure’s critical dependence on the compositions of the film surface and H-induced crystallization mechanism, which provide the important information for the strategy for determining optimized deposition conditions for local crystal formation. The results of the evolution of the structural network indicate that the structure of film is similar the CRN model’s representation at relative lower temperature, and is in full agreement with the inhomogeneous crystalline model at relative higher temperature without an abrupt phase change from polycrystalline to amorphous. Our CRN-KMC realistic structure model has significance for exploring the relation of various atomic-scale mechanisms to the phase transformation of growing films.

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TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate

Asymmetric Molecular Dynamics and Anisotropic Phase Separation in the Cocrystal of the Crystalline/Crystalline Polymer Blend

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Enhanced Recrystallization of Ultra-Thin Α-Silicon Film by 2-D Confined Lattice Regrowth

Solid phase crystallization of amorphous silicon at the two-dimensional limit

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Hybrid Reverse Monte Carlo and electron phase contrast image simulations of amorphous silicon with and without paracrystals

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Evolution of structural topology of forming nanocrystalline silicon film by atomic-scale-mechanism-driven model based on realistic network

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method