Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

SiC-based high electron mobility transistor

P-Channel HFET Utilizing 2D Hole Gas in Si-Face 3C/4H-SiC Heterostructure

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

Normally-off trench JFET technology in 4H silicon carbide

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Fabrication of 80-Nm T-gate High Indium In0.7Ga0.3As/In0.6Ga0.4As Composite Channels Mhemt on GaAs Substrate with Simple Technological Process

Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

0.3-&Amp;#x00b5;m Gate-Length Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates by MOCVD

Novel Designed SiC Devices for High Power and High Efficiency Systems

Development of 3C-SiC MOSFETs

213 W 500 Mhz 4H-Sic Static Induction Transistor

Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Fabrication of 45 Nm High in Component Metamorphic In(0.7)Ga0.3as/In0.6ga(0.4)As Composite-Channel High Electron-Mobility Transistors on Gaas Substrates

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz