Abstract:Monolayer GeC possesses a bandgap of 2.07 eV with a high hole mobility up to 6600 cm2 V–1 s–1. The performance of 2D GeC field‐effect transistors (FETs) satisfy the International Technology Roadmap for Semiconductors (ITRS) and the International Roadmap for Devices and Systems (IRDS) standards with the channel scaling from 12 to 3 nm. Particularly, the on‐currents of GeC p‐FETs with a 10 nm channel can reach as high as 2991 μA μm–1. 2D materials are identified as Si alternatives for channels in next‐generation electronic devices. However, lack of high‐performance (HP) p‐type field‐effect transistors (FETs) acts as a block to the development of efficient complementary circuits. Here, p‐type monolayer GeC with planar structure is evaluated as a promising channel material to resolve the corresponding problems. The monolayer GeC possesses a direct bandgap of 2.07 eV with high hole mobility up to 6600 cm2 V–1 s–1. Coupling with ballistic quantum transport simulations, the results show that both n‐ and p‐FETs can hold the on‐currents exceeding 1200 μA μm–1 for HP devices. Particularly, for p‐type, the on‐currents with the channel shrinking from 10 to 3 nm can reach as high as 2991—1660 μA μm–1, which is of great value for the design of complementary circuits in 2D electronics. In addition, the figures of merits for GeC FETs, such as delay time, power dissipation, and energy‐delay product, are also assessed, fulfilling the demands of the International Technology Roadmap for Semiconductors (ITRS) and the International Roadmap for Devices and Systems (IRDS) for HP applications. Hence, this study demonstrates great potential of 2D GeC for future competitive electronic devices.

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