Abstract:The sandwich structure device of topological materials, Bismuth Selenide (Bi2Se3) and metal like gold (Au) has a remarkably high photoresponse in the broad range visible to near‐infrared (532 to 1064 nm), and these heterostructures reveal a range of optical transitions using ultrafast transient reflectance spectroscopy, including processes for charge and energy transfer, providing insight into phenomena like the plasmonics effect, and many‐body effects. Also, when electric bias is increased, the phonon frequency is increased of the sandwich structure device. In the realm of optoelectronic applications, the incorporation of a metal interlayer between layers of a topological material holds significant potential. The interlayer introduces benefits such as improved charge transfer efficiency, tunable band alignment, plasmonics effect, and enhanced light‐matter interactions, paving the way for more efficient and versatile optoelectronic devices. This work explores the incorporation of gold between Bi2Se3, resulting in an enhancement in the response time of photoresponse of interlayered systems (Bi2Se3‐Au‐Bi2Se3). The introduction of a gold interlayer between Bi2Se3 significantly influences the overlayer structure, crystallinity, crystallite size, and even phonon behavior. Moreover, the responsivity of the interlayered device at a bias (2 V) is found to have high responsivity with fast response and decay time (τr = 0.1 ms, and τd = 24 ms of interlayered systems) as compared to intrinsic Bi2Se3(τr = 0.6 ms, and τd = 28 ms). This change is attributed to the bandgap alteration of the Bi2Se3/Au interface, which is monitored through transient spectroscopy performed at different electric biases. This study suggests that incorporating a gold interlayer holds potential benefits for various optoelectronic applications.

Chemical Interactions at the Interface of Au on Bi2Se3 Topological Insulator

Chemical Interactions at the Interface of Au on Bi 2 Se 3 Topological Insulator

Chemical Instability of an Interface Between Silver and Bi2Se3 Topological Insulator at Room Temperature

Growth, morphology and stability of Au in contact with the Bi2Se3(0 0 0 1) surface

Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

The Interface Between Pt and Bi2Se3: Instability and Formation of a New Ordered Phase

Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Unveiling Electric Field Induced Ultrafast Charge Transfer Dynamics and Photoresponse Enhancement in Gold‐Interlayered Bi2Se3

Effect of the Post‐Annealing Temperature on the Interfacial Reaction Between a High TC Superconductor and Topological Insulator

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Persistence of the Topological Surface States in Bi2Se3 Against Ag Intercalation at Room Temperature

Interplay between topological insulators and superconductors

Copper migration and surface oxidation of $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$ in ambient pressure environments

Surface states modulation of topological insulator Bi2Se3 by noble metal decoration for gas sensing kinetic engineering

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Physicochemical processes at the boundary between some semiconducting solid solutions and contact alloys

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Microscopic investigation of Bi2-xSbxTe3-ySey systems: On the origin of a robust intrinsic topological insulator