Abstract:Background: Bi2Se3 holds significant importance in thermoelectric applications, and Co is considered a promising candidate for use as a barrier layer. This study investigates the interfacial reactions between Co and Bi2Se3, along with the phase equilibria within the Bi-Co-Se system, to provide fundamental insights. Methods: The Bi-Co-Se alloys and Bi2Se3 substrates were prepared with pure constituent elements. The Co/Bi2Se3 couples were formed by electroplating Co onto the Bi2Se3 substrates, followed by subjecting them to reactions at 400 degrees C and 500 degrees C. Significant findings: Isothermal sections of the Bi-Co-Se phase equilibria at 400 degrees C and 500 degrees C have been proposed based on key ternary experimental results and phase diagrams of its three constituent binary systems. No ternary compounds were observed. The stable phases and phase relationships are similar at both 400 degrees C and 500 degrees C, except for the instability of Co9Se8 at 500 degrees C. Significant interfacial reactions were observed in the Co/Bi2Se3 couples reacted at 400 degrees C and 500 degrees C. These results suggest that Co alone may not serve as a suitable barrier layer for Bi2Se3 at temperatures exceeding 400 degrees C. The reaction path at 400 degrees C is Co/Co1-chi Se/(Bi2)m(Bi2Se3)n/Bi2Se3, with Se as the dominant diffusion species. Se atoms migrate towards Co to form the Co1-chi Se phase and leave a Sedepleted Bi2Se3 behind to form (Bi2)m(Bi2Se3)n. Unexpected liquation occurred in the Co/Bi2Se3 couple reacted at 500 degrees C. This liquation resulted from the rapid outward diffusion of Se from the Bi2Se3, leading to the emergence of bismuth from the Se-depleted Bi2Se3 and its transformation into a molten state.

The Interface Between Pt and Bi2Se3: Instability and Formation of a New Ordered Phase

Chemical Instability of an Interface Between Silver and Bi2Se3 Topological Insulator at Room Temperature

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Growth, morphology and stability of Au in contact with the Bi2Se3(0 0 0 1) surface

Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface

Chemical Interactions at the Interface of Au on Bi2Se3 Topological Insulator

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Studies Of Two Distinct Types Of (Ba,Sr)Tio3/Pt Interfaces

Co/Bi2Se3 Interfacial Reactions and Bi-Co-Se Phase Equilibria

Chemical Interactions at the Interface of Au on Bi 2 Se 3 Topological Insulator

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Single Crystal Synthesis and Surface Electronic Structure of Bi1.993Cr0.007Se3

Polar discontinuities and interfacial electronic properties of Bi2O2Se on SrTiO3

Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers

The Electronic Structure of Clean and Adsorbate-Covered Bi2se3: an Angle-Resolved Photoemission Study

Chemical States Change at (ba,sr)tio3/pt Interfaces Investigated by X-Ray Photoelectron Spectroscopy

Polar discontinuities and interfacial electronic properties of Bi$_2$O$_2$Se on SrTiO$_3$

Stability Investigations on the Non-Vdw-Exfoliated Surfaces of the Topological Insulator Bi2te3: A First-Principles Study

Phase separation and bulk p-n transition in single crystals of Bi₂Te₂Se topological insulator.

Communication: Surface Stability and Topological Surface States of Cleaved Bi2se3: First-Principles Studies