Abstract:Abstract Low-field magnetotransport measurements of topological insulators such as Bi 2 Se 3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼10 19 cm −3 ) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi 2 Se 3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.

Phase separation and bulk p-n transition in single crystals of Bi₂Te₂Se topological insulator.

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Topological Phase Transition of Bi2–xInxTe3

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Defects and High Bulk Resistivities in the Bi-rich Tetradymite Topological Insulator Bi2+xTe2−xSe

Low-carrier-concentration Crystals of the Topological Insulator Bi2Te2Se

Topological phases of topological insulator thin films

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Separating the bulk and surface n- to p-type transition in the topological insulator GeBi(4-x)SbxTe7

O ct 2 01 2 A topological crystalline insulator phase via topological phase transition and crystalline mirror symmetry

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference

Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family

Unusual Janus Bi 2 TeSe 2 Topological Insulators Displaying Second-Harmonic Generation, Linear-in-Temperature Resistivity, and Weak Antilocalization

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase