Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

STRUCTURE AND PHOTOLUMINESCENT PROPERTIES OF SiCO THIN-FILMS DOPED WITH Al PREPARED BY DUAL MAGNETRON SPUTTERING

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Effects of Doping Al into SiO2 on Electroluminescence from Au/Nanometer (SiO2/Si/ SiO2)/p-Si Structure

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Influence of Al-doping on Electroluminescence of Silicon-Based Films

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Luminescent Properties and Microstructure of SiC Doped AlON: Eu2+ Phosphors

Enhancement of Er3+ emission from an Er-Si codoped Al 2O3 film by stacking Si-doped Al2O3 sublayers

Preparation and microstructure properties of Al-doped TiO2–SiO2 gel-glass film

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

The Structure and Optical Properties of SiC Film on Si (111) Substrate with a ZnO Buffer Layer by RF-magnetron Sputtering Technique

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Microstructure and optical properties of ZnAlO films prepared by Magnetron sputtering

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers

ation of surface passivation on porous silicon carbide using atomic layer deposited Al 2 O 3

Impact of aluminum doping on nonlinear absorption and ultrafast carriers dynamics of Al:CdO thin films

Facile Thermal Explosion Synthesis and Optical Properties of Al-doped Flatted 3C-Sic Microcrystals with 4H-Sic Quantum Interlayers

Blueshifted Kerr Effects and Enhanced Reflectivity in Nanocrystalline CoFe2−xAlxO4 Thin Films

Optical Properties of SiOx Film on Aluminum Substrate Prepared by APCVD

Magnetic Properties of Al-Sic Co-Sputtered Films Grown by Radio Frequency Sputtering