Abstract:The bottleneck between the limited memory bandwidth and high speed processing demands is the main cause of problems associated with high volume of data transfers in data-intensive applications. As a possible remedy to these issues, computing-in-memory (CiM) enables a subset of logic and arithmetic operations to be performed where the data resides, i.e., inside the memory. Various CiM designs have been proposed to date, based on different technologies. Given the variety of options available, picking the right design option for a system/application can be a complex task. When choosing a CiM design, it is important to establish evaluation conditions that are as uniform as possible to make a fair choice between available design options. In this paper, we describe a methodology for an uniform benchmarking of CiM designs. Our approach evaluates devices/circuits, arrays and the overall impact of CiM to a system with a framework based on Eva-CiM. As a case study, we analyze the array-level performance of 7 recent CiM designs implemented with SRAM, DRAM, FeFET-RAM, STT-MRAM, SOT-MRAM, and RRAM. After we identify that the FeFET-RAM-based design shows promising energy and delay savings at the array level, we carry out a system level evaluation showing that FeFET-RAM-based CiM outperforms a CMOS SRAM CiM baseline by an average of 60% across a set of 17 benchmarks (with respect to energy savings). Regarding speedups, both technologies offer virtually the same benefit of about 1.5X when compared to a situation where processing does not happen in memory.

An Efficient SRAM Yield Analysis Method using Multi -Fidelity Neural Network

An Efficient SRAM Yield Analysis and Optimization Method with Adaptive Online Surrogate Modeling

An Efficient Bayesian Yield Estimation Method for High Dimensional and High Sigma SRAM Circuits.

MAXIMUM LIKELIHOOD ESTIMATION FOR FAILURE ANALYSIS OF SRAM CELLS USING INDUCTIVE FAULT ANALYSIS

Efficient SRAM yield optimization with mixture surrogate modeling

An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits.

An Efficient Non-Gaussian Sampling Method for High Sigma SRAM Yield Analysis

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Seeking the Yield Barrier: High-Dimensional SRAM Evaluation Through Optimal Manifold

Efficient Yield Analysis for SRAM and Analog Circuits using Meta-Model based Importance Sampling Method

Importance Boundary Sampling for SRAM Yield Analysis with Multiple Failure Regions

An Efficient Adaptive Importance Sampling Method for SRAM and Analog Yield Analysis

Adaptive Clustering and Sampling for High-Dimensional and Multi-Failure-Region SRAM Yield Analysis.

Technology of Design to Optimize SRAM for Higher Yield

High-Dimensional and Multiple-Failure-Region Importance Sampling for Sram Yield Analysis

An Accurate and Efficient Yield Analysis for SRAM Dynamic Metrics Using Differential Evolution Algorithm

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

Yield Driven Design and Optimization for Near Threshold Voltage Sram Cells

Adaptive Low-Rank Tensor Approximation for SRAM Yield Analysis using Bootstrap Resampling

Rapid Estimation of the Probability of SRAM Failure Via Adaptive Multi-Level Sliding-Window Statistical Method.

Bayesian Methods for the Yield Optimization of Analog and SRAM Circuits