Abstract:Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device technologies with specially engineered properties are under intense investigation to revolutionize information processing with brain-inspired computing primitives for ultra energy-efficient implementation of AI and machine learning tasks. Ferroelectric memories with ultra-low power and fast operation, non-volatile data retention and reliable switching to multiple polarization states promises one such option for non-volatile memory and synaptic weight elements in neuromorphic hardware. For quick adaptation of industry, new materials need complementary metal oxide semiconductor (CMOS) process compatibility which brings a whole new set of challenges and opportunities for advanced materials design. In this work, we report on designing of back-end-of-line compatible ferroelectric Hf0.5Zr0.5O2 capacitors that are capable of recovery from fatigue multiple times reaching 2Pr > 40 microC cm-2 upon each retrieval. Our results indicate that with specifically engineered material stack and annealing protocols, it is possible to reach endurance exceeding 10^9 cycles at room temperature that can lead to ultralow power ferroelectric non-volatile memory components or synaptic weight elements compatible with online training or inference tasks for neuromorphic computing.

Anti-Ferroelectric ZrO$_{\text{2}}$ Capacitors with Ultralow Operating Voltage ($<$1.2 V) and Improved Endurance Toward Logic Compatible Edram

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

HfZrOx Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory