Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

A High-Frequency GaN-Based Motor Drive for Aircraft Electromechanical Actuators

A High-Frequency GaN-Based Motor Drive for Aircraft Electro-Mechanical Actuators

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A Digital PWM Controller of MHz Active Clamp Flyback with GaN Devices for AC-DC Adapter.

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A GaN-based MHz Active Clamp Flyback Converter with Adaptive Dual Edge Dead Time Modulation for AC-DC Adapters.

Research of High Frequency Drive Circuit for Motor Drive System Based on GaN Power Device

Application of Periodic Carrier Frequency Modulation for Harmonic and EMI Reduction in GaN-Based Motor Drive

Resonance Suppression and EMI Reduction of GaN-Based Motor Drive with Sine Wave Filter

A GaN Drive for Ultra-High-Speed Permanent Magnet Synchronous Motor

Quantitative Modeling and Analysis of Switching Oscillations of Cascode GaN Devices in Half-Bridge Converters

Switching Behavior of Cascode GaN under Influence of Gate Driver

GaN HEMT based high power density integrated inverter for a six-phase permanent magnet synchronous motor without forced convection

A GaN-Based Integrated Modular Motor Drive for Open-Winding Permanent Magnet Synchronous Motor Application

A SiC MOSFET Based High Efficiency Interleaved Boost Converter for More Electric Aircraft

A Resonant Drive Circuit for GaN Power MOSHFET

Vector control implementation in field programmable gate array for 200 kHz GaN-based motor drive systems

Design and Research of GaN - Based Motor Drive System with LC Output Filter

An Efficient High-Frequency Drive Circuit for GaN Power HFETs

33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving