Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

An Efficient High-Frequency Drive Circuit for GaN Power HFETs

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Resonant Drive Circuit for GaN Power MOSHFET

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

Ultra-Low Inductance Design for A Gan Hemt Based 3L-Anpc Inverter

A High-Speed Low Side GaN E-Hemt Driver with Gate Ringing and Overshoot Suppression.

High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

GaN Power IC Technology on P-Gan Gate HEMT Platform

High-Frequency Three-Level Gate Driver for GaN HEMT Bridge Crosstalk Suppression

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

A 20mhz 4A Gate Driver with 5.5 to 24V Output Drive Voltage for Wide Bandgap FETs.

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

Gate drive design considerations for high voltage cascode GaN HEMT

Planar GaN Power Integration - The World is Flat