Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

An Integrated Low-Power Enhanced Pull-Up GaN Driver Using SenseHEMT for Reliable and Fast Short-Circuit Protection

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

An Up to 10mhz 6.8% Minimum Duty Ratio GaN Driver with Dual-MOS-Switches Bootstrap and Adaptive Short-Pulse Based High-CMTI Level Shifter Achieving 6.05% Efficiency Improvement

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

A High-Speed Low Side GaN E-Hemt Driver with Gate Ringing and Overshoot Suppression.

20.3 A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

A New Simple and Low Cost Short Circuit Protection Method for P-Gan HEMT

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Resonant Gate Driver for High Speed GaN HMET with Dv/dt Control

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

A High-Voltage Half-Bridge Gate Drive Circuit for GaN Devices with High-Speed Low-Power and High-Noise-immunity Level Shifter

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

A Level Shifter for High-Side GaN Drivers with Enhanced Dv/dt Immunity and Speed

Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control