Abstract:This article reports the design and the first experimental demonstration of the monolithically integrated over-current protection (OCP) circuit in GaN power converters. The design criteria and protection time estimation methods are proposed. Through the GaN integration platform based on normally-OFF AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs), the OCP circuit is monolithically integrated with the gate driver and GaN switches. At the over-current incident, the current sensing signal is compared with over-current thresholds, and then the generated protection action signal is clamped to disable the high-side gate driver and shut down the GaN dc-dc buck converter. The analysis of current paths, SPICE-based simulations, and numerical description of the protection process are carried out to support the proposed design criteria and estimation methods. The experimental results show that the GaN dc-dc buck converter can be protected within one duty cycle period according to the desired preset over-current thresholds. The consistent results of the calculated and measured time periods in the OCP process have verified the proposed design criteria and estimation methods. The proposed OCP circuit together with the analysis can help researchers to design and estimate the OCP process in integrated GaN power converters.

Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC–DC Converters

All-GaN Two-stage Turn-off Circuits for Over-current Protection in GaN Monolithic Power ICs

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices

A High Speed Short-Circuit Protection Circuit with Current Limitation and Soft Turn-Off for High Power IGBTs

A New Simple and Low Cost Short Circuit Protection Method for P-Gan HEMT

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices

An Integrated Low-Power Enhanced Pull-Up GaN Driver Using SenseHEMT for Reliable and Fast Short-Circuit Protection

Paralleled GaN DHEMTs Integrated Cascode GaN Switch for High-Current Applications

20.3 A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

A Novel Cascode GaN Switch Integrating Paralleled GaN DHEMTs for High-Power Applications

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

A High-Speed Low Side GaN E-Hemt Driver with Gate Ringing and Overshoot Suppression.

A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation