Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Structure and 1/f Noise of Boron Doped Polymorphous Silicon Films

Noise in Boron Doped Amorphous/microcrystallization Silicon Films

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Origins of 1/ f noise in nanostructure inclusion polymorphous silicon films

Origins of 1/<it>f </it>noise in nanostructure inclusion polymorphous silicon films

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Influence of Boron Doping on Microcrystalline Silicon Growth

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Investigation on Resistance Instability of Boron-doped Amorphous Silicon Films

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Optical characterization of boron-doped nanocrystalline Si:H thin films

Photoluminescence and Raman Studies on Boron-Doped Nanocrystalline Si:H Thin Films

Structural Evolution and Electronic Properties of N-Type Doped Hydrogenated Amorphous Silicon Thin Films

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures