Origins of 1/ f noise in nanostructure inclusion polymorphous silicon films

Shibin Li,Yadong Jiang,Zhiming Wu,Jiang Wu,Zhihua Ying,Zhiming Wang,Wei Li,Gregory Salamo
DOI: https://doi.org/10.1186/1556-276X-6-281
2011-01-01
Nanoscale Research Letters
Abstract:In this article, we report that the origins of 1/ f noise in pm -Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α H , is independent of doping ratio. The 1/ f noise power spectral density and noise parameter α H are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm -Si:H film resistor were obtained through linear current-voltage measurement. The 1/ f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.
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