Low-Frequency Noise of Nc-Si:H/C-Si Heterojunction Diodes

M. Dai,J. I. Oh,W. Z. Shen

DOI: https://doi.org/10.1109/led.2011.2176552

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Low-frequency noise (LFN) measurements were performed on hydrogenated nanocrystalline silicon (nc-Si:H)/crystalline-silicon heterojunction diodes for the forward- and reverse-biased currents I. The 1/fγ noise with γ ~ 1.3 (for low I) or 0.6 (for high I ) was observed to dominate the LFN, and the noise power spectral density Si showed a power-law behavior (Si ~ Iα, where α ~ 2). This quadratic behavior may indicate the 1/fγ noise to stem from the carrier number fluctuations mediated by deep trap states (for γ ~ 1.3) or band tail states (for γ ~ 0.6) of nc-Si:H. Also, the band tail width of nc-Si:H was estimated to be ~ 65 meV.