1/f Noise in Silicon-Based Piezoresistive Microsensor

于晓梅,江兴流,J.THAYSEN,O.HANSEN,A.Boisen

DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.09.019

2001-01-01

Abstract:1/f noise was investigated in silicon-based piezoresistive microsensors as a function of the geometry and material of the pizeoresistors. A series of differently sized piezoresistive Wheastone bridges have been fabricated with single crystal silicon, LPCVD amorphous silicon, LPCVD polycrystalline silicon and LPCVD microcrystalline silicon as piezoresistive layers. The resistor layers are boron ion-implanted with two different doping doses, and then annealed at two different tempera-tures. The measurement results show that single crystal silicon is the best material for low noise microsensor. Compared with LPCVD piezoresistive devices, the Hooge factor of single crystal silicon can be reduced more than two magnitude orders. The Hooge factor is independent of the device geometry though the larger sized resistors have lower 1/f noise. The 1/f noise will be decreased by 35-50% if the doping dose increases 10 times. The Hooge factor keeps unchanged for the piezoresistive devices of different doping concentrations.