Abstract:<p>Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it is shown that the spectrum of absorbance of silicon can be extended to longer wavelengths by proximity to a two-dimensional (2D) semiconductor. Photo-induced Hall effect, together with standard absorption spectroscopy, was employed to estimate the increase of photo-conversion efficiency of a 2D-platinum-diselenide/intrinsic-silicon heterostructure. The system shows a significantly higher absorption in the infrared as compared to the single films. Angle resolved X-ray Photoelectron Spectroscopy (XPS) confirm that a change of the band structure occurs in the silicon substrate at the interface between the two semiconductors. The results are interpreted in the framework of band-gap narrowing due to hole-confinement in the Si, induced by electron-confinement in the 2D film. This allows us to claim that the increase of photo-conversion efficiency in the Pt/PtSe<sub>2</sub>/Si sample is due to an enhancement of the light absorbance of silicon near the interface. Possible application of the effect in photo-voltaic cells is discussed.</p>

Resonant Photoemission from Si(001)

Silane Photoabsorption Spectra Near the Si 2p Thresholds: the Geometry of Si 2p Excited SiH 4 **

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Observing Er3+ Sites in Si with an in Situ Single-Photon Detector

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Photoabsorption and photoresponse behaviors of Si1−xGex/Si quantum wells

Direct Radiative Recombination in the Se-terminated Nanoscale Si Porous Structure

Theoretical Study of Photoabsorption Spectra Near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes

Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

Photoemission Study of the Sm/Si(100)2×1 Interface

Resonant Energy Transfer from Nanocrystal Si to Β-Fesi 2 in Hybrid Si/β-FeSi 2 Film

Cathodoluminescence of Silicon in the Visible–ultraviolet Region

Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Photoionization of Individual CdSe/CdS Core/Shell Nanocrystals on Silicon with 2-nm Oxide Depends on Surface Band Bending

In-Situ Single-Photon Detection of Er Sites in Si

Two-band Structure in Photoluminescence Spectra from Porous Silicon and Its Dependence on Excitation Wavelength

Determination of the Geometric Structure of Core Excited Silane Based on Photoabsorption Spectra Near the Si 2p Edges

Resonant Electron Transfer and Luminescent Enhancement in a Toluene Suspension of Si Nanocrystals