Abstract:Rotationally resolved spectra of the H3Σu--X3Σg- electronic transition bands of Si2 have been experimentally studied using laser-induced fluorescence in the 380-520 nm range. Si2 molecules are produced in a supersonically expanding planar plasma by discharging a silane/argon gas mixture. In total, 44 bands belonging to the H3Σu--X3Σg- electronic transition system of the most abundant isotopologue 28Si2 are experimentally recorded. With a spectral resolution of ∼0.04 cm-1, the triplet spin-splitting structures in individual rotational transition lines are fully resolved. Detailed analyses on the high-resolution spectra have yielded an accurate determination of spectroscopic constants for both X3Σg- and H3Σu- states. The spin-spin interaction constants for the two triplet states are found to be comparable (λ ≈1.5 cm-1), which may originate from the 3p atomic orbital interaction in the triplet Si2 molecule. The measured isotopologue spectra of 29Si28Si and 30Si28Si indicate that the H3Σu--X3Σg- transition system of 29S28S and 30S28S can be reasonably reproduced by the isotope mass-scaling rule. Spectroscopic parameters, including the Franck-Condon factors, the Einstein coefficients, and the oscillator strengths, are also determined from the experimental results and the Rydberg-Klein-Rees (RKR) calculations. The agreement between the experimentally measured and calculated dispersed fluorescence spectra indicates that the RKR calculations with the molecular constants determined in this work can accurately reproduce the diatomic potentials of both states. These molecular data provide a benchmark in high-level theoretical studies on Si2 and likely other small silicon clusters.

Determination of the Geometric Structure of Core Excited Silane Based on Photoabsorption Spectra Near the Si 2p Edges

Silane Photoabsorption Spectra Near the Si 2p Thresholds: the Geometry of Si 2p Excited SiH 4 **

Theoretical studies of the structure of C2H2 adsorbed on Si(001)

Theoretical studies of the structure of C 2H 2 adsorbed on Si(0 0 1)

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Stability and electronic spectroscopy of isomers for C74Si2

Theoretical Study of Photoabsorption Spectra Near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes

Quantum chemical studies on the structures and electronic spectra of C60SiH2

Molecular Design and Studies on Electronic Spectra for C76Si2

Spectroscopy and molecule opacity investigation on excited states of SiS

Electronic Structure for the Ground and Excited Satate of Si-2

High-Resolution Laser Spectroscopic Survey of the H3Σu--X3Σg- Electronic Transition of Si2.

A Nonlinear Model for Highly Excited Vibrational Energy Levels of Silane

High-Resolution Spectroscopic Study of the Local Mode Vibrational-States of Silane

High-resolution Spectroscopy of Ν3 and Ν1 + Ν3 Bands of SiD4

Inner-shell Photoabsorption Spectra

Infrared and ab initio studies of compounds containing SiH bonds: Vibration-internal rotation spectra and silyl group geometry in PhSiHD2

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Geometries and Spectroscopic Properties of Silicon Clusters (si5, Si5+, Si5−, Si6, Si6+, and Si6−)

A ROTATIONAL ANALYSIS OF UV MULTIPHOTON IONIZATION SPECTRUM OF SiH4

High-resolution Spectroscopic Study of the (2000) Stretching Vibrational Band and Vibrational Dependence of Rotational Constants of Silane