Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes with Broadening Current Spreading Capability

Hongchang Tao,Shengrui Xu,Junchun Bai,Tao Zhang,Huake Su,Yachao Zhang,Xu Liu,Yuan Gao,Jincheng Zhang,Ruixue Ding,Yue Hao

DOI: https://doi.org/10.1109/ted.2024.3408781

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, an in situ C-doped GaN layer inserted into the n-GaN region of ultraviolet light-emitting diodes (UV LEDs) is proposed and investigated to mitigate the severe current crowding effect of GaN-based UV LEDs. Since carbon is a common impurity for GaN grown by metal-organic chemical vapor deposition (MOCVD), it plays the role of deep acceptor in GaN. Taking advantage of the feasibility of C-doped GaN in the MOCVD growth process, the effect of in situ C-doped GaN insertion layer grown under various temperatures on UV LED performance is investigated and the optimized temperature is obtained. The experimental results show that the in situ C-doped GaN insertion layer is able to enhance the light output of UV LEDs, and the uniform light-emission distribution proves that the alleviated current crowding is achieved. For UV LEDs with the in situ GaN insertion layer grown at 800 degree celsius, the wall-plug efficiency (WPE) shows an increase of 10.9% compared with the conventional GaN-based UV LEDs at 20 mA. The numerical simulation results also show the more uniform and higher hole concentrations in the quantum well (QW), which is attributed to the conductivity modulation of the n-type region induced by the C-doped GaN insertion layer.