Pro-environment Cu2O facilitate stable low-wastage ultraviolet p-CuxO/n-GaN LEDs with virtual electron blocking nanolayer

Hui Wang,Fei Fan Yang,Rong Li,Yi Jian Zhou,Wen Bo Peng,Guo Jiao Xiang,Jin Ming Zhang,Yue Liu,Jia Hui Zhang,Yang Zhao,Zhi Feng Shi,Hui Wang,Fei Fan Yang,Rong Li,Yi Jian Zhou,Wen Bo Peng,Guo Jiao Xiang,Jin Ming Zhang,Yue Liu,Jia Hui Zhang,Yang Zhao,Zhi Feng Shi

DOI: https://doi.org/10.1016/j.optlastec.2022.108063

2022-07-01

Abstract:Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society. Herein single-phase Cu2O and mixed-phase CuxO (x = 1, 4/3, 2) films are fabricated on n-GaN to construct p-Cu2O/n-GaN and p-CuxO/n-GaN LEDs, respectively. The application of Cu2O in LEDs is achieved for the first time. Discovering that the p-Cu2O/n-GaN diode hovers a rectification ratio at 95 and a near-ideal leakage current (2.0 × 10-11 A). The near band edge (NBE) emission is located at 372 nm, and the energy proportion of ultraviolet radiation (EPUV, <400 nm) rapidly and steadily stays at 80 % above 3 mW. Under the same injection power (35 mW), the luminous intensity of p-Cu2O/n-GaN is nearly 90 times than that of p-CuxO/n-GaN. Surprisingly marvelous that the energy band structure of Cu2O is equivalent to a virtual electron blocking layer (EBL) in GaN-based LEDs to optimize UV emission performance. Finally, uncased LED chips suffered high temperatures and the constant current aging process. The p-Cu2O/n-GaN LED exhibits a satisfying thermal stability with the optimum working temperature at 70 ∼ 100 °C. The luminous intensity decays 25.1 % after operating at room temperature (RT) for 3600 s, less than half of the p-CuxO/n-GaN LED, further reveal an exceptional practical application potential.

optics,physics, applied