Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO₂films

Xin Liu,Lulu Yao,Weidong Zhao,Jiawei Wang,Yonghong Cheng

DOI: https://doi.org/10.1088/1361-6528/ad53d4

IF: 3.5

2024-01-01

Nanotechnology

Abstract:We investigated the effects of oxygen vacancies on the ferroelectric behaviors of the Al:HfO2 films annealed in O2 and N2 atmosphere. The XPS results showed that the O/Hf atomic ratio were 1.88 for N2-annealed samples and 1.96 for O2-annealed samples, respectively, implying an neutralization of oxygen vacancies during O2 atmosphere annealing. The O2-annealed films exhibited an increasing remanent polarization from 23 μC/cm2 to 28 μC/cm2 after 104 cycling, with a negligible leakage current density of ~2 μA/cm2, while the remanent polarization decreased from 29 μC/cm2 to 20 μC/cm2 after cycling in the N2-annealed films, with its severe leakage current density decreasing from ~1200 μA/cm2 to ~300μA/cm2. A phase transition from the metastable tetragonal(t) phase to the low-temperature stable orthorhombic(o) phase and monoclinic(m) phase was observed to undergo during annealing. As a result of the fierce competition between the t-to-o transition and the t-to-m transition, clear grain boundaries of several several ruleless atomic layers were formed in the N2-annealed samples. On the other hand, the transition of t-phase to the low-temperature stable phase were found to be hindered by the neutralization of oxygen vacancies, with almost continuous grain boundaries observed. The results elucidate the phase transformation affected by oxygen vacancies in the Al:HfO2 films, which may be helpful for the preparation of HfO2-based film with excellent ferroelectricity.