Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

High On/Off Current Ratio and High <i>V</i><sub>th</sub>/<i>R</i><sub>on</sub> Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

High On/Off Current Ratio and High $\textit{v}_{\text{th}}$ / $\textit{r}_{\text{on}}$ Stability GaN MIS-HEMTs with GaN/AlN Superlattices Barrier

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Fabrication and Formation Mechanisms of Ohmic Conducts with Low Annealing Temperature for GaN/AlN Superlattice Barrier HEMTs