Simulation on Microstructural Evolution under Electromigration in Backside Power Delivery Network

Xin Zeng,Zhiheng Huang,Min Xiao,Yuezhong Meng,Hui Yan,Yang Liu
DOI: https://doi.org/10.1109/icept59018.2023.10492263
2023-01-01
Abstract:A state-of-art design, so-called backside power delivery network (BS-PDN), has been proposed for future logic scaling enablement. Nevertheless, electromigration (EM) can be a potential risk causing an increase of electric resistance or even an open circuit failure (OCF) inside the BS-PDN. Here, we use a phase field model to investigate the interplay between microstructural evolution and EM damage in the BS-PDNs. One typical configuration of a BS-PDN, which consists of a nano through-silicon-via (n-TSV), a buried power rail (BPR) and a local metal interconnect (LMI), is referenced to construct the model geometry. The areas near the cathode side interface of each component are regarded as the critical regions where most of EM damages develop. The grain structures in the critical regions, the anisotropic grain boundary (GB) mobility and the material choice for BPR are considered as influential factors on EM reliability. Three criteria on the EM reliability can be put forward, amongst which the most important criterion is the material choice for the BPR because the time to the OCF increases significantly in the BS-PDN with Ru-BPR. The other two criteria are the number of GBs intersecting with the BPR-LMI interface and whether or not these GBs are high angle GBs.
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