1530-nm electroluminescence from <i>p</i>-Ga₂S₃:Er/<i>n<SUP>+</SUP></i>-Si heterojunctions induced by Zener tunneling

Lei Wang,Xiaohong Ji,Qinyuan Zhang

DOI: https://doi.org/10.1063/5.0178408

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Silicon-based near-infrared (NIR) light sources with a simple structure are significant for circuit integration and fiber optic communications. Herein, 1530-nm electroluminescence (EL) from p-Ga2S3:Er/n(+)-Si junction light-emitting devices (LEDs) is reported with Er-doped Ga2S3 nanofilms as the photoemission layer and heavily doped n-type silicon as the substrate. The 1530-nm EL emission is attributed to the energy transfer between the Ga2S3 host and the Er3+ dopant, and it reaches its maximum at Er-doping concentration of 1 mol. % as the device works at -4.8 mA. The Er-related NIR EL occurs only at reverse voltages because the holes and electrons for recombination in Ga2S3:Er come from the Zener tunneling in the depletion region and the direct ITO injection, respectively. The realization of 1530-nm p-Ga2S3:Er/n(+)-Si LEDs offers opportunities for silicon-based integrated light sources.