Abstract:Conventional DRAM, consisting of one transistor and one capacitor (1T1C), requires periodic data refresh processes due to its limited retention time and data-destructive read operation. Here, we propose and demonstrate a novel 3D-DRAM memory scheme available with a single transistor and a single ferroelectric field-effect transistor (FeFET) DRAM (2T0C-FeDRAM), which offers extended retention time and non-destructive read operation. This architecture uses a back-end-of-line (BEOL)-compatible amorphous oxide semiconductor (AOS) that is suitable for increasing DRAM cell density. Notably, the device structures of a double gate a-ITZO/a-IGZO FeFET, used for data storage and reading, are engineered to achieve an enlarged memory window (MW) of 1.5 V and a prolonged retention time of 10 4 s. This is accomplished by a double gate and an a-ITZO/a-IGZO heterostructure channel to enable efficient polarization control in hafnium-zirconium oxide (HZO) layers. We present successful program/erase operations of the double gate a-ITZO/a-IGZO FeFET through incremental step pulse programming (ISPP), demonstrating multi-level states with remarkable retention characteristics. Most importantly, we perform 2T0C-FeDRAM operations by electrically connecting the double gate a-ITZO/a-IGZO FeFET and the a-ITZO FET. Leveraging the impressive performance of the double gate a-ITZO/a-IGZO FeFET technology, we have effectively showcased an exceptionally record-long retention time exceeding 2000 s and 4-bit multi-level states, positioning it as a robust contender among emerging memory solutions in the era of artificial intelligence.

First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through Design Technology Co-Optimization

Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Demonstration of 1 V Reliable FeRAM Operation: V c Engineering Using Quasi-Chirality of Hf 1- x Zr x O 2 in a Nanolaminate Structure

A 9-Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7-Ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

Design Space Exploration of FeRAM Bit Cell for DRAM Application

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

A highly CMOS compatible hafnia-based ferroelectric diode

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

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Fabrication of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1-x O 2 FeRAM and FeFET with Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM