Impact of Ultrathin Al2O3 Interlayer on Thermal Stability and Leakage Current Properties of TiO2/Al2O3 Stacking Dielectrics

Hongbo Wang,Dayan Ma,Fei Ma,Ke Xu

DOI: https://doi.org/10.1116/1.4732737

2012-01-01

Abstract:Ultrathin TiO2/Al2O3 stacking structures were fabricated using an atomic layer deposition technique. The effect of the ultrathin Al2O3 interlayer on interfacial thermal stability and leakage current properties were studied. After thermal annealing of the TiO2/Al2O3/TiO2/Al2O3/Si structure at 700 °C for 60 s, the Al2O3 double layers remained amorphous, although the layers of TiO2 were crystallized. The amorphous Al2O3 divided the grain boundaries which would otherwise serve as diffusion paths for atoms and as leakage current channels from the TiO2 layers. As a result, atomic diffusion and surface roughness were suppressed, and the leakage current value was reduced by about a 1.5 order of magnitude compared with TiO2/Al2O3/Si. The improved interfacial stability as well as the reduced leakage current density indicates the present stacking structure has potential application in future high-performance microelectronics.