Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Thermal Stability, Structural and Electrical Characteristics of the Modulated Hfo2/Al2o3 Films Fabricated by Atomic Layer Deposition

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Crystallization Behaviors of Ultrathin Al-doped HfO 2 Amorphous Films Grown by Atomic Layer Deposition

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Hfo2/Al2o3 Nanolaminate Structure on Si

Properties of HfAlO Film Deposited by Plasma Enhanced Atomic Layer Deposition

Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Annealing behaviors of structural, interfacial and optical properties of HfO 2 thin films prepared by plasma assisted reactive pulsed laser deposition

Thermodynamics and Kinetic Behaviors of Thickness-Dependent Crystallization in High-K Thin Films Deposited by Atomic Layer Deposition

Controlling the crystallinity of HfO2 thin film using the surface energy-driven phase stabilization and template effect

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

The Thermal Stability of Atomic Layer Deposited HfLaOx: Material and Electrical Characterization

High Thermal Stability of Nanostructured Al Mediated by Heterophase Interfaces and Nanotwinning

Thermal Stability of Al-Doped Zro2 Films Prepared by Reactive Rf Magnetron Sputtering

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films