Abstract:Recently, doped HfO2 thin films have attracted considerable attention because of promising applications in complementary metal–oxide–semiconductor (CMOS)‐compatible ferroelectric memories. Herein, the ferroelectric properties and polarization fatigue of La:HfO2 thin‐film capacitors are reported. By varying the substrate lattice constant and film thickness, a robust remanent polarization of ≈16 μC cm−2 is achieved in a 12 nm‐thick Pt/La:HfO2/La0.67Sr0.33MnO3 capacitor. Fatigue measurements are conducted using designed pulse sequences, in which the voltage, pulse width, and interval time are changed to observe the evolution of switchable polarization with increasing cycles. Severe fatigue is observed when the La:HfO2 capacitors are partially switched and the interval between the bipolar switching is elongated. These behaviors may be ascribed to the domain wall pinning scenario, in which domain switching is blocked by the migration and aggregation of charges on non‐electroneutral walls. Further analysis of the fatigue behaviors with a nucleation‐limited‐switching model shows that the mean time and activation field for polarization switching are increased in fatigued La:HfO2 capacitors because electrical stimuli are required to disperse the aggregated charges before the domains are set free. These results facilitate the design and fabrication of HfO2‐based ferroelectric memories with improved device reliability.

The Thermal Stability of Atomic Layer Deposited HfLaOx: Material and Electrical Characterization

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

The Evolution of the Hfsiox/Si Interface along with the Increase of Forming Gas Annealing Temperature

Transparent Polycrystalline Monoclinic HfO2 Dielectrics Prepared by Plasma Assisted Pulsed Laser Deposition

Hysteresis-free HfO2 Film Grown by Atomic Layer Deposition at Low Temperature

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

ZrO2-HfO2 Superlattice Ferroelectric Capacitors with Optimized Annealing to Achieve Extremely High Polarization Stability

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Electrical Characteristics and Conduction Mechanisms of Metal-Insulator-Metal Capacitors with Nanolaminated Al(2)O(3)-Hfo(2) Dielectrics

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Ferroelectric Properties and Polarization Fatigue of La:HfO2 Thin‐Film Capacitors

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures