Abstract:The thermal and mechanical stability of molybdenum and amorphous silicon (Mo/a-Si) optical multilayers (3 and 4 nm nominal thickness of Mo and Si) at 316 °C were studied by annealing experiments. Growth of amorphous Mo-Si interlayers with a stoichiometry of 1∶2 was observed at the Mo/a-Si interfaces. In addition, residual stresses significantly changed in the crystalline Mo and amorphous Si layers with annealing. High resolution electron microscopy, selected area electron diffraction, and X-ray diffraction of the crystalline Mo revealed that tensile stresses increased from 2 to about 10 GPa in the lateral direction (parallel to the interface plane). The compressive strains that developed in the vertical direction (perpendicular to the interface plane) are consistent with Poisson's ratio. Laser deflectometer measurements of thicker (0.1 μm) amorphous silicon layers may indicate compressive-stress relaxation in the amorphous silicon with annealing, consistent with other investigations. Overall, the residual stress in a 40-bilayer film changes from about −0.5 to about +1.5 GPa. Structural transformation after relatively short annealing times at the interfaces in the thin amorphous Mo-Si interlayers may rationalize increased tensile strains in the Mo layers.

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Interface Constraint Effect and Stress Relaxation in Nano-Sandwiched Thin Film

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO _2 Film: A Molecular Dynamics Study

Stress-Induced Wrinkling of Sputtered Sio2 Films on Polymethylmethacrylate

Stress relaxation in Mo/Si multilayer structures

Stress Analysis of Mo, MoSi 2 and Si Mono-Layer Thin Films and Multilayers Prepared by Magnetron Sputtering

Real time stress monitoring in reflow solder: Cu thin films in Si(111)

Study on the Measurement and Mechanism of Stress in SiO2 Thin Films

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Stress and Microstructure Evolution in Al-Induced Crystallization of Amorphous Ge Thin Films

Measurements of Residual Stresses in Al Film/silicon Nitride Substrate Microcantilever Beam Systems

Stress Relaxation in Sandwiched Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Al/Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; Thin Films

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Interface Constraint Effect and Stress Relaxation in Nano-Sandwiched Thin Film

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO _2 Film: A Molecular Dynamics Study

Stress-Induced Wrinkling of Sputtered Sio2 Films on Polymethylmethacrylate

Stress relaxation in Mo/Si multilayer structures

Stress Analysis of Mo, MoSi 2 and Si Mono-Layer Thin Films and Multilayers Prepared by Magnetron Sputtering

Real time stress monitoring in reflow solder: Cu thin films in Si(111)

Study on the Measurement and Mechanism of Stress in SiO2 Thin Films

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Stress and Microstructure Evolution in Al-Induced Crystallization of Amorphous Ge Thin Films

Measurements of Residual Stresses in Al Film/silicon Nitride Substrate Microcantilever Beam Systems

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films