Abstract:The mechanical strengths of silicon wafers are crucial for the manufacturing yield of integrated circuits (ICs), which have received intensive attention over the years. With reducing the feature size of ICs, the mechanical strengths of silicon wafers become more significant. Actually, the gliding of indentation dislocations on single-crystalline silicon wafers at a given temperature reflects the mechanical strengths of silicon wafers. Since the gliding of indentation dislocations is driven by the residual stress around the indentation, the investigation on the correlation between the residual stress and dislocation gliding is of significance. In this paper, we first use micro-Raman microscopy to characterize the relief of stress around the indentation due to the annealling at 300 or 500 ℃. Then the effect of such a relief-stress on the gliding of indentation dislocations at 700-900 ℃ is investigated. In the case without the prior stress-relief, the indentation dislocations glide to the maximum distance after 2 h annealling at 700-900 ℃. With the prior stress-relief due to the annealling at 300 or 500 ℃, the indentation dislocations can still glide to the maximum distance after 2 h annealling at 900 ℃, however the gliding velocity significantly decreases and the gliding distance is remarkably reduced after 2 h annealling at 700 or 800 ℃. Such a reduction of gliding distance is most significant in the case of 700 ℃ annealling following the stress-relief with the 500 ℃/2 h annealling. Despite the prior stress-relief, as long as the annealing time at 700 or 800 ℃ is sufficiently extended, the indentation dislocations can glide to the maximum distance. In view of the above results, it is believed that the maximum gliding distance of indentation dislocations at a given temperature is independent of the values of residual stress around the indentation provided that the residual stresses are larger than the critical stress for driving the dislocation movement. Nevertheless, the annealing time for achieving the maximum gliding distance at a given temperature should be remarkably extended as the residual stresses around the indentation are relieved.

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO _2 Film: A Molecular Dynamics Study

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

The loading speed facilitating stress relaxation behaviors of surface-modified silicon: a molecular dynamics study

Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study

Mechanical Properties and Deformation Behaviors of Surface-Modified Silicon: a Molecular Dynamics Study

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Nanoindentation and Deformation Behaviors of Silicon Covered with Amorphous SiO2: a Molecular Dynamic Study

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Stress relaxation in Mo/Si multilayer structures

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Interface Constraint Effect and Stress Relaxation in Nano-Sandwiched Thin Film

Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon

On the Fracture Toughness Measurement of Thin Film Coated Silicon Wafers

Characterization of the Young's Modulus and Residual Stresses for a Sputtered Silicon Oxynitride Film Using Micro-Structures

Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO _2 Film: A Molecular Dynamics Study

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

The loading speed facilitating stress relaxation behaviors of surface-modified silicon: a molecular dynamics study

Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study

Mechanical Properties and Deformation Behaviors of Surface-Modified Silicon: a Molecular Dynamics Study

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Nanoindentation and Deformation Behaviors of Silicon Covered with Amorphous SiO2: a Molecular Dynamic Study

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Stress Relaxation in Sandwiched Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Al/Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; Thin Films

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Stress relaxation in Mo/Si multilayer structures

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Interface Constraint Effect and Stress Relaxation in Nano-Sandwiched Thin Film

Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon

On the Fracture Toughness Measurement of Thin Film Coated Silicon Wafers

Characterization of the Young's Modulus and Residual Stresses for a Sputtered Silicon Oxynitride Film Using Micro-Structures

Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films