Deposition and Property Characterization InxSy Buffer Layers in Cu (In, Ga) Se2 Solar Cells
Jingping Lu,Demiao Wang,Hao Jin,Jian Zhou,Yuandong Li
DOI: https://doi.org/10.3969/j.issn.1672-7126.2013.09.18
2013-01-01
Abstract:The InxSy buffer layers,to be used in fabricating the Cu( In,Ga) Se2(CIGS)solar cells,were deposited by RF magnetron sputtering on soda lime glass substrates. The impacts of the deposition conditions,such as the sputtering power,deposition rate,pressure,and substrate temperature,on the microstructures and properties of the InxSy buffer layers were evaluated. The InxSy buffer layers were characterized with X-ray diffraction,energy dispersive spectroscopy,scanning electron microscopy,and ultraviolet spectrophotometer. The results show that the sputtering power significantly affects the microstructures,contents,and properties of the buffer layers. For example,as the sputtering power increased,the grain size increased;the stoichiometry of sulfur increased and gradually leveled off;and the optical band-gap varied in an increase-decrease mode. Deposited at 80 W,the InxSy buffer layers,with the widest optical band-gap of 2. 75 eV,work well for fabrication of high efficient InxSy/ CIGS solar cells.