REM Observation of Electron-Beam-induced Reactions on GaAs(110) Surface

Lian‐Mao Peng
DOI: https://doi.org/10.1016/0304-3991(89)90010-7
IF: 2.994
1989-01-01
Ultramicroscopy
Abstract:A reflection electron microscopy (REM) observation has been made of the desorption and migration processes of the As2 molecules and Ga atoms on the GaAs(110) surface, induced by the focused incident fast electron beam. The observations were performed in a conventional TEM instrument. However, by utilising the cold stage, the contaminations can be greatly reduced so that a clean surface could be retained after electron-beam-induced etching of surface carbon contaminants by water vapour. A series of five REM images are presented which show that in some preferential cases even meaningful observations of chemical reactions are possible in spite of the comparatively poor vacuum in the CTEM instrument.
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