Abstract:A femtosecond electron‐based versatile microscopy that combines scanning ultrafast electron microscopy imaging and time‐resolved cathodoluminescence detection allows for directly visualizing and decoupling complex carrier dynamics involved in surface and bulk of semiconductors with unprecedented spatiotemporal and energetic resolutions. Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low‐dimensional, high‐speed, and ultrasensitive devices. Here, a femtosecond electron‐based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time‐resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state‐of‐the‐art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n‐type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband‐/defect‐assisted radiative recombination in the energy domain result in ordinal super‐diffusion, localization, and sub‐diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Application of reflection electron microscopy in cross-sectional study of multilayer semiconductor devices

Reflection electron imaging of semiconductor multilayer materials

A Combined Rem and Wtem Study of Gaas Alxga1-Xas Multilayer Structures

Reflection Electron Microscopy Imaging of GaAs/AlxGa1−xAs Multilayer Materials

REM Observation of Electron-Beam-induced Reactions on GaAs(110) Surface

Reflection electron imaging of free surfaces and surface/dislocation interactions

A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface

Development of in Situ Characterization of Two-Dimensional Materials Grown on Insulator Substrates with Spectroscopic Photoemission and Low Energy Electron Microscopy

Illumination of Crystal-Surfaces in the Electron-Microscope under Rheed and Rem Geometry

Surface Resonance Effects and Beam Convergence in Rem

Application of High Spatial Resolution Scanning Work Function Spectroscopy to Semiconductor Surfaces and Interfaces

Measurement of Residual Stress in a Multi-Layer Semiconductor Heterostructure by Micro-Raman Spectroscopy

Three-dimensional profile measurement of micro-electro-mechanical systems structures based on infrared light reflection interference

Application of phase shifting technique for SEM scanning moiré method in MEMS

A Femtosecond Electron‐Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Application of phase shifting technique for SEM scanning moire method im MEMS

Scanning Cathodoluminescence Microscopy: Applications in Semiconductor and Metallic Nanostructures

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Nano-mapping of vertical contact electrodes using synchrotron scanning photoelectron microscopy

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Combining scanning electrochemical microscopy with infrared attenuated total reflection spectroscopy for in situ studies of electrochemically induced processes