Abstract:The dark current–voltage (\(I{-}V\)) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260–360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias regions, the temperature-dependent \(I{-}V\) characteristics are detailed in terms of diode parameters and dominant conduction mechanisms. Due to the existence of Al2O3 film layer and series resistance in the diode structure, current flow under the forward bias is observed in a deviation from pure exponential characteristics. The diode parameters are estimated from thermionic emission model with non-unity ideality factor, and this non-ideal behavior is resulted in the ideality factors greater than two. In addition to these values, zero-bias barrier height is found to be strongly temperature dependent, and this variation indicates a presence of inhomogeneties in the barrier according to Gaussian distribution (GD) approximation. This fact is investigated plotting characteristic plot of this model and by extracting mean barrier height with its standard deviation. In order to complete the work on the forward I–V region, the carrier transport characteristics of the diode are explained on the basis of thermionic emission mechanism with a GD of the harrier heights. In accordance with this approximation, the conventional Richardson plot exhibits non-linearity behavior and modified current relation based on GD model is used to calculate mean barrier height and Richardson constant. In addition, the values of parasitic resistances are determined using Ohm's law as a function of temperature for all bias voltage spectra. In the reverse bias region, Poole–Frenkel effect is found to be dominant on the conduction associated with the barrier lowering, and barrier height in the emission process from the trapped states, and high-frequency dielectric constant of Al2O3 film layer is calculated.

A Study of the Characteristics of P-Type Al/6H-SiC Schottky Diode

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Electrical Characteristics of 10-Kv 4H-Sic MPS Rectifiers with High Schottky Barrier Height

Accurate Modeling of Ni/6H-SiC Schottky Barrier Diode (SBD) Forward Characteristics at High Current Densities

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Effect of TiN capping layer on barrier inhomogeneities for TiSix/Si Schottky diode

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

SiC devices: physics and numerical simulation

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Photoelectrical characterization of heavily-doped p-SiC Schottky contacts

Characterization Of The Inhomogeneous Barrier Distribution In A Pt/(100) Beta-Ga2o3 Schottky Diode Via Its Temperature-Dependent Electrical Properties

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

Fabrication and investigation of AlGaN-based Schottky barrier diode

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Analysis of forward and reverse biased current–voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN