Abstract:The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor (CMOS) devices. In the present work, SRIM program and photocarrier radiometry (PCR) are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nm-level thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold (Y ED) of 5.3 × 1015 cm−3 are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.

Implanted Dopant and Associated Damage Profile in MeV 166er+ Implanted Silicon

Ion implantation induced damage in relaxed Si0.75Ge0.25

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Differential Nonlinear Photocarrier Radiometry for Characterizing Ultra-Low Energy Boron Implantation in Silicon

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Quantifying Implantation Damage and Point Defects with Multislice Electron Ptychography

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Research on dopant distribution of multi-energy boron implantations into c-SiC

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Photocarrier Radiometric and Ellipsometric Characterization of Ion-Implanted Silicon Wafers

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Evolution of secondary defects in arsenic implanted Si

Damage analysis of 25KeV As+ implantation into silicon with large tilt angles

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Implant Damage and Redistribution of Indium in Indium-Implanted Thin Silicon-on-insulator

A study of optical characteristics of damage in oxygen-implanted 6H-SiC

[Photoluminescence from Si and Er Dual-Implanted Si-rich Thermal Oxidation SiO2/Si Thin Films].

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films