Preparation of AlN Films on Si(111) and Si(100) Substrates by Magnetron Reactive Sputtering

Cuiping Li

2010-01-01

Abstract:Aluminum nitrogen(AlN) films are successfully deposited on single-crystal Si(111) and Si(100) substrates by the radio frequency(RF) magnetron reactive sputtering technique,respectively.The influence of substrate orientation and N2 percentage on preferentially orientated AlN(002) thin film is studied experimentally and theoretically.The orientation of the films is characterized by X-ray diffraction(XRD).The experimental results show that the films on Si(100) with 40% N2 exhibit best crystal properties with sharp XRD peaks,corresponding to AlN(002) crystalline orientation.The lattice mismatch of AlN(002)/Si(111) can be considered as that between triangle crystal systems,and the lattice mismatch of AlN(002)/Si(100) can be considered as that between triangle crystal system and square crystal system.By calculation,the mismatch of the former is 23.5% and that of the latter is 0.8%.Si(100) plane and AlN(002) plane can be considered as lattice fully-coherent.Therefore,the theory analysis is consistent with experimental results.