Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Effect of Argon Pressure on Properties of Flexible ZnO∶Al Films

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering

Effect of oxygen partial pressure on microstructure, optical and electrical property of C-Al co-doped ZnO films

Effects of Sputtering Pressure on Properties of Al Doped Zno Thin Films Dynamically Deposited by Rf Magnetron Sputtering

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Investigation of ZnO∶Al Thin Films Deposited by RF Magnetron Sputtering

Influence of Sputtering Pressure on the Properties of ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering

Optical and Electrical Properties of ZnO:Al Thin Films Synthesized by Low-Pressure Pulsed Laser Deposition

Effect of the ZnO buffer layer thickness on AZO film properties

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Effects of Deposition Pressure on the Properties of Transparent Conductive Zno : Ga Films Prepared by Dc Reactive Magnetron Sputtering

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Transparent Conductive Al-Doped Zno Thin Films Grown at Room Temperature

Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

Oxygen-regulated photoelectric performance of ZnOx film on Ni foil

Effect of sputtering pressure on the electrochromic properties of flexible NiO films prepared by magnetron sputtering